Chiayi, Taiwan

Jyun-Siang Huang


Average Co-Inventor Count = 3.2

ph-index = 5

Forward Citations = 70(Granted Patents)


Location History:

  • Chiayi, TW (2011 - 2017)
  • Hsinchu, TW (2011 - 2017)

Company Filing History:


Years Active: 2011-2017

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23 patents (USPTO):Explore Patents

Title: Innovations of Jyun-Siang Huang in Memory Technologies

Introduction

Jyun-Siang Huang, based in Chiayi, Taiwan, is a prominent inventor with an impressive portfolio of 23 patents. His work primarily focuses on advancing memory technologies, which play a crucial role in modern electronics. Huang's innovative approaches have the potential to enhance data storage capabilities and improve the efficiency of electronic devices.

Latest Patents

Among his latest contributions, Huang has developed a **Method of Fabricating Memory Structure**. This memory structure includes a sophisticated design featuring a memory cell with a first gate situated on a substrate. The innovative stacked structure consists of multiple dielectric elements and charge storage units, ensuring high performance and reliability in memory operation. Another significant patent is his **Composite Impurity Scheme for Memory Technologies**, which involves an integrated circuit that features a memory array with diffusion bit lines possessing composite impurity profiles. This invention significantly enhances conductivity and doping profiles even with critical dimensions below 50 nanometers, showcasing Huang's cutting-edge advancements in the field.

Career Highlights

Jyun-Siang Huang works at Macronix International Co., Ltd., a leader in memory and storage solutions. His extensive experience and dedication in the field of semiconductor technology have established him as a key figure in driving innovations that address the challenges faced by the industry. His inventions have contributed not only to the company’s success but also to the broader field of electronics.

Collaborations

Huang collaborates closely with esteemed colleagues, including Wen-Jer Tsai and Tien-Fan Ou. These partnerships foster a creative environment where innovative ideas flourish, leading to the development of groundbreaking technologies and patentable inventions that push the boundaries of memory storage solutions.

Conclusion

Jyun-Siang Huang is a remarkable inventor whose contributions to memory technology significantly impact the electronics industry. With 23 patents to his name, his work continues to inspire future innovations, showcasing the importance of collaborative efforts in advancing technology. As he progresses in his career, Huang’s influence on memory technologies is likely to grow, enhancing devices and systems that rely on efficient data storage.

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