The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2014

Filed:

Aug. 08, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Jyun-Siang Huang, Chiayi, TW;

Wen-Jer Tsai, Hualien, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes a plurality of memory cells arranged in series in the semiconductor body, such as a NAND string, having a plurality of word lines. A selected memory cell is programmed by hot carrier injection using a boosted channel potential to establish the heating field. Boosted channel hot carrier injection can be based on blocking flow of carriers between a first side of a selected cell and a second side of the selected cell in the NAND string, boosting by capacitive coupling the first semiconductor body region to a boosted voltage level, biasing the second semiconductor body region to a reference voltage level, applying a program potential greater than a hot carrier injection barrier level to the selected cell and enabling flow of carriers from the second semiconductor body region to the selected cell to cause generation of hot carriers.


Find Patent Forward Citations

Loading…