The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Jun. 24, 2011
Applicants:

Jyun-siang Huang, Hsinchu, TW;

Wen-jer Tsai, Hsinchu, TW;

Ping-hung Tsai, Hsinchu, TW;

Inventors:

Jyun-Siang Huang, Hsinchu, TW;

Wen-Jer Tsai, Hsinchu, TW;

Ping-Hung Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for erasing a memory array is provided. The memory array comprises a plurality of memory cell strings, and each of the memory cell strings comprises a plurality of memory cells connected to a plurality of word lines. The method for erasing the memory array includes the following steps. A first voltage is applied to a substrate of the memory array. A second voltage is applied to a word line of a selected memory cell, and a plurality of passing voltages are applied to other word lines. And, a third voltage and a fourth voltage are respectively applied to a first source/drain region and a second source/drain region of the selected memory cell, so that a band to band (BTB) hot hole injecting method is induced to erase the specific memory cell, wherein the third voltage is not equal to the fourth voltage.


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