Hsinchu, Taiwan

Ping-Hung Tsai

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 37(Granted Patents)


Location History:

  • Hsinchu, TW (2012 - 2015)
  • Taoyuan, TW (2014 - 2015)

Company Filing History:


Years Active: 2012-2015

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7 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Ping-Hung Tsai

Introduction

Ping-Hung Tsai is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 7 patents. His work has advanced the technology used in semiconductor memory, particularly in NAND flash memory systems.

Latest Patents

Among his latest patents is a memory device and method of forming the same. This invention includes a first dielectric layer, a T-shaped gate, two charge storage layers, and two second dielectric layers. The first dielectric layer is disposed on a substrate, while the T-shaped gate is positioned on the first dielectric layer, featuring an upper gate and a lower gate. Gaps are present on both sides of the lower gate and between the upper gate and the substrate, with charge storage layers embedded into these gaps. Additionally, a second dielectric layer is placed between each charge storage layer and the upper gate, lower gate, and substrate.

Another significant patent involves low voltage programming in NAND flash memory. This memory device consists of a series of memory cells arranged in a semiconductor body, such as a NAND string, with multiple word lines. A selected memory cell is programmed through hot carrier injection, where the program operation is based on controlling the flow of carriers between semiconductor body regions adjacent to the selected cell. A program potential higher than the hot carrier injection barrier level is applied, allowing the drain to source voltage and carrier flow to reach levels sufficient for hot carrier injection.

Career Highlights

Ping-Hung Tsai has worked with prominent companies in the semiconductor industry, including Macronix International Co., Ltd. and Tirid Tech Co., Ltd. His experience in these organizations has contributed to his expertise in memory device technology.

Collaborations

Throughout his career, Tsai has collaborated with talented individuals such as Wen-Jer Tsai and Jyun-Siang Huang. These collaborations have likely enriched his work and led to innovative advancements in the field.

Conclusion

Ping-Hung Tsai's contributions to memory device technology are noteworthy, with several patents that showcase his innovative spirit. His work continues to influence the development of advanced semiconductor memory systems.

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