The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
May. 10, 2013
Macronix International Co., Ltd., Hsinchu, TW;
Ching-Hung Wang, Hsinchu, TW;
Jyun-Siang Huang, Chiayi, TW;
Chien-Hung Liu, Taipei, TW;
Chia-Wen Cheng, Kaohsiung, TW;
Ying-Tso Chen, Kaohsiung, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A semiconductor element and a manufacturing method of the same are provided. The semiconductor element includes a substrate, a plurality of doping strips, a memory material layer, a plurality of conductive damascene structures, and a dielectric structure. The doping strips are formed in the substrate. The memory material layer is formed on the substrate, and the memory material layer comprises a memory area located on two sides of the doping strips. The conductive damascene structures are formed on the memory material layer. The dielectric structure is formed on the doping strips and between the conductive damascene structures. The conductive damascene structures are extended in a direction perpendicular to a direction which the doping strips are extended in.