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For the Inventor, By the Inventor

Fremont, CA, United States of America

Jun Chen

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Boca Raton, FL (US) (2006)
  • Fremont, CA (US) (2014 - 2024)

Company Filing History:

goldMedal1 out of 2,542 
 
Cadence Design Systems, Inc.
 patents
silverMedal1 out of 118 
 
Magic Technologies, Inc.
 patents
bronzeMedal1 out of 30 
 
Advanced Numicro Systems, Inc.
 patents
4. 11 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2006-2024

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17 patents (USPTO):
1. 11957063 - Magnetoresistive element having a nano-current-channel structure (2024-04-09),
2. 11910721 - Perpendicular MTJ element having a cube-textured reference layer and methods of making the same (2024-02-20),
3. 11854589 - STT-SOT hybrid magnetoresistive element and manufacture thereof (2023-12-26),
4. 11805702 - Methods of forming perpendicular magnetoresistive elements using sacrificial layers (2023-10-31),
5. 11600660 - Bottom-pinned magnetic random access memory having a composite SOT structure (2023-03-07),
6. 11569440 - Making a memoristic array with an implanted hard mask (2023-01-31),
7. 11545290 - Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy (2023-01-03),
8. 11527708 - Ultra-fast magnetic random access memory having a composite SOT-MTJ structure (2022-12-13),
9. 11450467 - Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same (2022-09-20),
10. 11450466 - Composite seed structure to improve PMA for perpendicular magnetic pinning (2022-09-20),
11. 11444239 - Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme (2022-09-13),
12. 11316102 - Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning (2022-04-26),
13. 11251367 - Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning (2022-02-15),
14. 11081154 - Synthetic magnetic pinning element having strong antiferromagnetic coupling (2021-08-03),
15. 10423753 - Method and apparatus for efficient and accurate signal electromigration analysis of digital-on-top designs with complex interface pin shapes (2019-09-24),

Title: Innovations of Jun Chen in Magnetic Technologies

Introduction

Jun Chen, a prolific inventor based in Fremont, CA, holds an impressive portfolio of 17 patents. His contributions primarily focus on magnetoresistive elements and their applications in advanced memory technologies. With a commitment to innovation, Jun has made significant strides in the field of magnetic recording and storage solutions.

Latest Patents

Among Jun's notable recent patents is the development of a magnetoresistive element featuring a nano-current-channel structure. This design incorporates a nonmagnetic nano-current-channel structure on the surface of the magnetic recording layer, thereby optimizing the performance of exchange-spring magnets in terms of critical write current and write power. The innovation represents a step forward in creating magnetically soft-hard composite structures.

Another significant patent describes a perpendicular MTJ (Magnetic Tunnel Junction) element equipped with a cube-textured reference layer. This invention introduces a method for fabricating a novel magnetic pinning structure, enhancing the coherent tunneling effect due to its specific textural composition. This progress is particularly relevant for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM), which promises to improve memory technology, making it more energy-efficient and non-volatile.

Career Highlights

Throughout his career, Jun Chen has worked with various organizations, including Cadence Design Systems, Inc. His experience in the industry has allowed him to engage in pioneering innovations within the sector, contributing to essential advancements in magnetic technologies.

Collaborations

Jun has collaborated with esteemed colleagues such as Rongfu Xiao and Yimin Guo, with whom he has combined his expertise to further develop cutting-edge technologies in magnetoresistive elements. These collaborations highlight his ability to work alongside other talented professionals in the field, fostering an environment of creativity and technical excellence.

Conclusion

Jun Chen stands out as a significant figure in the field of magnetoresistive technologies. With his extensive patent portfolio and impactful collaborations, he continues to drive advancements that influence the future of memory technologies. His innovative spirit and dedication to research exemplify the transformative power of invention in modern engineering.

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