The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Nov. 25, 2020
Applicants:
Yimin Guo, San Jose, CA (US);
Rongfu Xiao, Dublin, CA (US);
Jun Chen, Fremont, CA (US);
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01F 10/32 (2006.01); H01L 43/12 (2006.01); H01F 41/30 (2006.01);
U.S. Cl.
CPC ...
H01F 10/3286 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3268 (2013.01); H01F 41/302 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.