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For the Inventor, By the Inventor

Dublin, CA, United States of America

Rongfu Xiao

USPTO Granted Patents = 57 

Average Co-Inventor Count = 2.9

ph-index = 18

Forward Citations = 1,472(Granted Patents)


Inventors with similar research interests:


Location History:

  • Fremont, Alameda, CA (US) (2004)
  • Fremont, CA (US) (2000 - 2015)
  • Dublin, CA (US) (2013 - 2024)

Company Filing History:

goldMedal19 out of 728 
 
Western Digital (fremont), Inc.
 patents
silverMedal10 out of 118 
 
Magic Technologies, Inc.
 patents
bronzeMedal8 out of 1,214 
 
Headway Technologies, Incorporated
 patents
4. 1 out of 4 
 
Shanghai Ciyu Information Technologies Co., Ltd
 patents
5. 1 out of 1 
 
T3memory Usa, Inc.
 patent
6. 1 out of 1 
 
American Optics Science
 patent
7. 13 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2024

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57 patents (USPTO):
1. 11957063 - Magnetoresistive element having a nano-current-channel structure (2024-04-09),
2. 11910721 - Perpendicular MTJ element having a cube-textured reference layer and methods of making the same (2024-02-20),
3. 11854589 - STT-SOT hybrid magnetoresistive element and manufacture thereof (2023-12-26),
4. 11805702 - Methods of forming perpendicular magnetoresistive elements using sacrificial layers (2023-10-31),
5. 11600660 - Bottom-pinned magnetic random access memory having a composite SOT structure (2023-03-07),
6. 11569440 - Making a memoristic array with an implanted hard mask (2023-01-31),
7. 11545290 - Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy (2023-01-03),
8. 11527708 - Ultra-fast magnetic random access memory having a composite SOT-MTJ structure (2022-12-13),
9. 11450467 - Magnetoresistive element having a giant interfacial perpendicular magnetic anisotropy and method of making the same (2022-09-20),
10. 11450466 - Composite seed structure to improve PMA for perpendicular magnetic pinning (2022-09-20),
11. 11444239 - Magnetoresistive element having an adjacent-bias layer and a toggle writing scheme (2022-09-13),
12. 11316102 - Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning (2022-04-26),
13. 11251367 - Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning (2022-02-15),
14. 11094877 - Method for making MRAM with small dimension and high qulity (2021-08-17),
15. 11088200 - Lattice matched seed layer to improve PMA for perpendicular magnetic pinning (2021-08-10),

Title: The Innovative Mind of Rongfu Xiao: Transforming Magnetoresistive Elements

Introduction: Rongfu Xiao, a brilliant inventor based in Dublin, California, has made significant contributions to the field of magnetoresistive technology. With an impressive portfolio of 57 patents, Xiao's pioneering work has revolutionized the design and functionality of magnetoresistive elements.

Latest Patents:

1. Magnetoresistive Element with Nano-Current-Channel Structure: Xiao's groundbreaking invention features a nonmagnetic nano-current-channel (NCC) structure embedded in the magnetic recording layer. This unique design reduces the critical write current and power, enhancing the performance of exchange-spring magnets within the magnetically soft-hard composite structure.

2. Perpendicular MTJ Element with Cube-Textured Reference Layer: Xiao's method involves creating a magnetic pinning structure with a textured reference layer, optimizing the coherent tunneling effect in perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM). This innovation enables high MR ratio and pinning strength, ideal for next-generation electronic chips.

Career Highlights: Rongfu Xiao has made significant strides in his career, notably working at Western Digital in Fremont, California. His expertise in magnetoresistive technology has propelled him to the forefront of innovation, with a focus on developing cutting-edge solutions for memory applications.

Collaborations: Throughout his career, Xiao has collaborated with esteemed colleagues such as Yimin Guo and Jun Chen. Their collective expertise and dedication to advancing magnetoresistive technology have led to groundbreaking discoveries in the field.

Conclusion: Rongfu Xiao's relentless pursuit of innovation and his groundbreaking patents in magnetoresistive technology have cemented his legacy as a visionary inventor. His contributions to the field continue to shape the future of memory technology, paving the way for advancements in power efficiency and non-volatile memory solutions.

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