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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11805702 B1

PDFFull Text
Date of Patent:
Oct. 31, 2023

Filed:

May. 06, 2021

Methods of forming perpendicular magnetoresistive elements using sacrificial layers

Applicants:

Yimin Guo, San Jose, CA (US);

Rongfu Xiao, Dublin, CA (US);

Jun Chen, Fremont, CA (US);

Inventors:

Yimin Guo, San Jose, CA (US);

Rongfu Xiao, Dublin, CA (US);

Jun Chen, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:

Thao X Le

Assistant Examiner:

Sean Ayers Winters

Int. Cl.
CPC ...
H10N 50/01 (2023.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G11C 11/161 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A perpendicular magnetoresistive element comprises (counting from the element bottom): a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction; a tunnel barrier layer; a crystalline recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction; an oxide buffer layer; and a cap layer, wherein the crystalline recording layer consists of a CoFe alloy that is substantially free of boron and has BCC (body-centered cubic) CoFe grains having epitaxial growth with (100) plane parallel to a film surface.

Find Patent Forward Citations

Guo, Yimin. (2023). Methods of forming perpendicular magnetoresistive elements using sacrificial layers (U.S. Patent No. 11805702). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11805702

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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