The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Feb. 28, 2021
Yimin Guo, San Jose, CA (US);
Rongfu Xiao, Dublin, CA (US);
Jun Chen, Fremont, CA (US);
Other;
Abstract
A magnetoresistive element using combined spin-transfer-torque controlled magnetic bias and VCMA effects comprising a free layer and an adjacent-bias layer separated by a nonmagnetic spacing layer, wherein the free layer has an interfacial perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, the adjacent-bias layer has a perpendicular magnetic anisotropy and a variable magnetization direction substantially perpendicular to a film surface, and the perpendicular anisotropy of the free layer is sufficiently higher than that of the adjacent-bias layer such that the critical switching current to reverse the free layer magnetization direction is at least 3 times as high as the critical switching current to reverse the adjacent-bias layer magnetization direction. Further, there is provided a toggle writing method of the perpendicular magnetoresistive element comprises: applying a first write pulse having a first voltage magnitude and a first pulse width to reverse the adjacent-bias layer magnetization direction to be anti-parallel to the free layer magnetization direction by spin-transfer-torque effect, and applying a second write pulse having a second voltage magnitude and a second pulse width to reverse the free layer magnetization direction to be parallel to the adjacent-bias layer magnetization direction by voltage-controlled magnetic anisotropy effect under the magnetic dipole bias field from the adjacent-bias layer.