The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Jan. 23, 2017
Applicants:

Yimin Guo, San Jose, CA (US);

Rongfu Xiao, Dublin, CA (US);

Jun Chen, Fremont, CA (US);

Inventors:

Yimin Guo, San Jose, CA (US);

Rongfu Xiao, Dublin, CA (US);

Jun Chen, Fremont, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/2463 (2013.01); H01L 45/1675 (2013.01); H01L 45/1683 (2013.01); H01L 45/1691 (2013.01); H01L 27/222 (2013.01);
Abstract

The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.


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