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Milpitas, CA, United States of America

Magic Technologies, Inc.

USPTO Granted Patents = 118

% Expired Patents = 13.6

EPO Patents = 13

Forward Citations = 2,172

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61 inventors (with patents filed for the assignee):

Cheng Tzong Horng (34 out of 167 patents)

Yimin Guo (33 out of 125 patents)

Ru-Ying Tong (32 out of 176 patents)

4. Chyu-Jiuh Torng (28 out of 100 patents)

5. Po-Kang Wang (27 out of 127 patents)

6. Witold Kula (18 out of 102 patents)

7. Tai Min (16 out of 68 patents)

8. Hsu Kai Yang (14 out of 26 patents)

9. Tom Zhong (14 out of 48 patents)

10. Rongfu Xiao (10 out of 57 patents)

11. Wai-Ming Johnson Kan (9 out of 12 patents)

12. Wei Cao (8 out of 47 patents)

13. Adam Zhong (7 out of 10 patents)

14. Liubo Hong (7 out of 72 patents)

15. Xizeng Shi (6 out of 52 patents)

Core Competencies:

MRAM

MTJ

Spin-Transfer Torque

Magnetic Tunnel Junction

Memory Products

Magnetic Anisotropy

MEMS

Biosensors

Magnetic Devices

Fabrication Methods

High Performance

Magnetoresistive

118 patents: Sort by Forward Citations

1. 12743056 - Delay line calibration method (2026-09-22),

2. 8654577 - Shared bit line SMT MRAM array with shunting transistors between bit lines (2014-02-18),

3. 8636911 - Process for MEMS scanning mirror with mass remove from mirror backside (2014-01-28),

4. 8609262 - Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application (2013-12-17),

5. 8605520 - Replaceable, precise-tracking reference lines for memory products (2013-12-10),

6. 8592927 - Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications (2013-11-26),

7. 8576618 - Shared bit line SMT MRAM array with shunting transistors between bit lines (2013-11-05),

8. 8570793 - Shared bit line SMT MRAM array with shunting transistors between bit lines (2013-10-29),

9. 8565014 - Shared bit line SMT MRAM array with shunting transistors between bit lines (2013-10-22),

10. 8541855 - Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications (2013-09-24),

11. 8508006 - Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications (2013-08-13),

12. 8497559 - MRAM with means of controlling magnetic anisotropy (2013-07-30),

13. 8492169 - Magnetic tunnel junction for MRAM applications (2013-07-23),

14. 8488357 - Reference cell architectures for small memory array block activation (2013-07-16),

15. 8470462 - Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions (2013-06-25),

Magic Technologies, Inc., based in Milpitas, California, specializes in the development and manufacturing of advanced magnetic memory devices. The company focuses on innovative technologies such as Magnetoresistive Random Access Memory (MRAM) and Magnetic Tunnel Junctions (MTJ), leveraging principles of Spin-Transfer Torque and Magnetic Anisotropy. Their expertise extends to various applications, including MEMS and biosensors, positioning them at the forefront of next-generation memory solutions and magnetic technologies.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

118 Patents

#25 in Milpitas, CA

#736 in California

#3,261 in US

#6,730 in the World

Milpitas, CA, United States of America

Magic Technologies, Inc.

Forward Citations = 2,172

61 inventors:

Cheng Tzong Horng (34 out of 167 patents)

Yimin Guo (33 out of 125 patents)

Ru-Ying Tong (32 out of 176 patents)

4. Chyu-Jiuh Torng (28 out of 100 patents)

5. Po-Kang Wang (27 out of 127 patents)

Please report any incorrect information to [email protected]

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