The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Nov. 30, 2010
Cheng T. Horng, San Jose, CA (US);
Ru-ying Tong, Los Gatos, CA (US);
Guenole Jan, San Jose, CA (US);
Cheng T. Horng, San Jose, CA (US);
Ru-Ying Tong, Los Gatos, CA (US);
Guenole Jan, San Jose, CA (US);
MagIC Technologies, Inc., Milpitas, CA (US);
Abstract
A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A CoFeB/NCC/CoFeB, CoFeB/NCC/CoFeB/NCC, or CoFeB/NCC/CoFeB/NCC/CoFeBfree layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiOis used to minimize Jcwhile enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The CoFeBlayers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.