Inventors with similar research interests:
Location History:
- Fishkill, NY (US) (1978 - 1981)
- Santa Clara County, CA (US) (2001)
- San Jose, CA (US) (1981 - 2016)
Company Filing History:
113 out of 1,214 
34 out of 118 
19 out of 164,108 
Years Active: 1978-2016
Cheng Tzong Horng: A Pioneer in Magnetic Tunnel Junction Innovations
Introduction:
In the world of technological advancements, Cheng Tzong Horng has emerged as a prominent inventor and innovator. Based in San Jose, California, Cheng Tzong Horng is known for his remarkable contributions in the field of magnetic tunnel junction (MTJ) technology. With an impressive record of 159 patents, he has made groundbreaking discoveries that have revolutionized various applications such as MRAM and STT-RAM devices.
Latest Patents:
Among his recent patents, one notable invention is the "Magnetic Tunnel Junction for MRAM Applications". This patent introduces an MTJ design featuring a composite free layer composed of a lower crystalline layer, an upper amorphous layer, and a tunnel barrier. The configuration of this structure significantly enhances bit switching performance, reducing bit line switching current and the number of shorted bits. By utilizing specific elements such as Ni, Fe, Mg, Hf, Zr, Nb, or Ta within the layers, Cheng Tzong Horng has achieved remarkable results, including a high magnetoresistive ratio.
Another significant innovation by Cheng Tzong Horng lies in the "Structure and Method to Fabricate High-Performance MTJ Devices for Spin-Transfer Torque (STT)-RAM Applications". This patent introduces an MTJ design with a magnesium oxide (MgO) tunnel barrier formed by natural oxidation, accompanied by an oxygen surfactant layer. This combination ensures a more uniform and reliable MgO layer, reducing breakdown distribution percent. Incorporating a unique composition of CoFeB/NCC/CoFeB composite free layer and middle nanocurrent channel layer, this innovation offers superior thermal stability, write voltage, read voltage, and Hc values, making it suitable for 64Mb design requirements.
Career Highlights:
Cheng Tzong Horng has an impressive career history, working with renowned companies such as Headway Technologies, Incorporated, and Magic Technologies, Inc. During his tenure at these organizations, he has played a crucial role in developing cutting-edge technologies and pushing the boundaries of MTJ innovation.
Collaborations:
Throughout his career, Cheng Tzong Horng has collaborated with notable individuals to create groundbreaking inventions. Among his coworkers, Ru-Ying Tong and Kochan Ju deserve special mention for their contributions in this field. Their collective expertise and passion have helped in pushing forward the frontiers of MTJ research and development.
Conclusion:
Cheng Tzong Horng's ingenious inventions and tireless commitment to advancing MTJ technology have made him a true pioneer in the field. His patents showcase his deep understanding and innovative approaches to improve performance, reliability, and functionality in MRAM and STT-RAM applications. Cheng Tzong Horng's contributions continue to shape the landscape of magnetic tunnel junctions, leading to advancements that benefit a range of industries.
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