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Milpitas, CA, United States of America

Applied Spintronics, Inc.

USPTO Granted Patents = 31

% Expired Patents = 54.8

EPO Patents = 7

Forward Citations = 785

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18 inventors (with patents filed for the assignee):

Po-Kang Wang (12 out of 127 patents)

Xizeng Shi (10 out of 52 patents)

Liubo Hong (10 out of 72 patents)

4. Ru-Ying Tong (9 out of 176 patents)

5. Yimin Guo (9 out of 125 patents)

6. Tai Min (9 out of 68 patents)

7. Hsu Kai Yang (8 out of 26 patents)

8. Cheng Tzong Horng (8 out of 167 patents)

9. Pokang Wang (6 out of 18 patents)

10. Xi Zeng Shi (5 out of 6 patents)

11. Lin Yang (4 out of 71 patents)

12. Mao-Min Chen (4 out of 105 patents)

13. Min Li (3 out of 203 patents)

14. Bruce Yee Yang (3 out of 6 patents)

15. Tom Zhong (2 out of 48 patents)

Core Competencies:

MTJ Read Head

MRAM Array

Adaptive Algorithm

Magnetic Tunneling Junction

Cell Structure

Programming Scheme

Sidewall Spacers

Electrical Read Lines

Bit Line Resistance

Fabrication Method

Free Layer Locking

Oxidation Structure

31 patents: Sort by Forward Citations

1. 7544983 - MTJ read head with sidewall spacers (2009-06-09),

2. 7499314 - Reference cell scheme for MRAM (2009-03-03),

3. 7480172 - Programming scheme for segmented word line MRAM array (2009-01-20),

4. 7476919 - MRAM cell structure and method of fabrication (2009-01-13),

5. 7449345 - Capping structure for enhancing dR/R of the MTJ device (2008-11-11),

6. 7443707 - Magnetic random access memory array with free layer locking mechanism and method of its use (2008-10-28),

7. 7394123 - Magnetic random access memory array with thin conduction electrical read and write lines (2008-07-01),

8. 7394122 - Magnetic random access memory array with thin conduction electrical read and write lines (2008-07-01),

9. 7369430 - Adaptive algorithm for MRAM manufacturing (2008-05-06),

10. 7369376 - Amorphous layers in a magnetic tunnel junction device (2008-05-06),

11. 7362644 - Configurable MRAM and method of configuration (2008-04-22),

12. 7335961 - Magnetic random access memory array with coupled soft adjacent magnetic layer (2008-02-26),

13. 7321507 - Reference cell scheme for MRAM (2008-01-22),

14. 7241632 - MTJ read head with sidewall spacers (2007-07-10),

15. 7238979 - Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM (2007-07-03),

Applied Spintronics, Inc. is a technology company based in Milpitas, California, specializing in the development of advanced spintronic devices and materials. The organization focuses on harnessing the unique properties of electron spin to create innovative solutions for data storage and processing, aiming to enhance performance and efficiency in electronic systems. With a commitment to cutting-edge research, Applied Spintronics is positioned at the forefront of the evolving landscape of semiconductor technology.

Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Oct 6 2026

31 Patents

#59 in Milpitas, CA

#2,611 in California

#10,921 in US

#21,238 in the World

Milpitas, CA, United States of America

Applied Spintronics, Inc.

Forward Citations = 785

18 inventors:

Po-Kang Wang (12 out of 127 patents)

Xizeng Shi (10 out of 52 patents)

Liubo Hong (10 out of 72 patents)

4. Ru-Ying Tong (9 out of 176 patents)

5. Yimin Guo (9 out of 125 patents)

Please report any incorrect information to [email protected]

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