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Milpitas, CA, United States of America

Applied Spintronics, Inc.

USPTO Granted Patents = 31

% Expired Patents = 54.8

EPO Patents = 7

Forward Citations = 785

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18 inventors (with patents filed for the assignee):

Po-Kang Wang (12 out of 127 patents)

Xizeng Shi (10 out of 52 patents)

Liubo Hong (10 out of 72 patents)

4. Ru-Ying Tong (9 out of 176 patents)

5. Yimin Guo (9 out of 125 patents)

6. Tai Min (9 out of 68 patents)

7. Hsu Kai Yang (8 out of 26 patents)

8. Cheng Tzong Horng (8 out of 167 patents)

9. Pokang Wang (6 out of 18 patents)

10. Xi Zeng Shi (5 out of 6 patents)

11. Lin Yang (4 out of 71 patents)

12. Mao-Min Chen (4 out of 105 patents)

13. Min Li (3 out of 203 patents)

14. Bruce Yee Yang (3 out of 6 patents)

15. Tom Zhong (2 out of 48 patents)

31 patents: Sort by Forward Citations

1. 7544983 - MTJ read head with sidewall spacers (2009-06-09),

2. 7499314 - Reference cell scheme for MRAM (2009-03-03),

3. 7480172 - Programming scheme for segmented word line MRAM array (2009-01-20),

4. 7476919 - MRAM cell structure and method of fabrication (2009-01-13),

5. 7449345 - Capping structure for enhancing dR/R of the MTJ device (2008-11-11),

6. 7443707 - Magnetic random access memory array with free layer locking mechanism and method of its use (2008-10-28),

7. 7394123 - Magnetic random access memory array with thin conduction electrical read and write lines (2008-07-01),

8. 7394122 - Magnetic random access memory array with thin conduction electrical read and write lines (2008-07-01),

9. 7369430 - Adaptive algorithm for MRAM manufacturing (2008-05-06),

10. 7369376 - Amorphous layers in a magnetic tunnel junction device (2008-05-06),

11. 7362644 - Configurable MRAM and method of configuration (2008-04-22),

12. 7335961 - Magnetic random access memory array with coupled soft adjacent magnetic layer (2008-02-26),

13. 7321507 - Reference cell scheme for MRAM (2008-01-22),

14. 7241632 - MTJ read head with sidewall spacers (2007-07-10),

15. 7238979 - Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM (2007-07-03),

Applied Spintronics, Inc. is a leading technology company specializing in spintronics applications. We develop and commercialize innovative spintronic devices for various industries, including data storage, semiconductor, and computer hardware. Our team of highly skilled engineers and scientists work tirelessly to create cutting-edge solutions that push the boundaries of spintronics technology. With a strong focus on research and development, we strive to provide our clients with state-of-the-art products that deliver superior performance and efficiency. Visit our website to learn more about our groundbreaking spintronics solutions.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 15 2026

31 Patents

#59 in Milpitas, CA

#2,606 in California

#10,900 in US

#21,196 in the World

Milpitas, CA, United States of America

Applied Spintronics, Inc.

Forward Citations = 785

18 inventors:

Po-Kang Wang (12 out of 127 patents)

Xizeng Shi (10 out of 52 patents)

Liubo Hong (10 out of 72 patents)

4. Ru-Ying Tong (9 out of 176 patents)

5. Yimin Guo (9 out of 125 patents)

Please report any incorrect information to [email protected]

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