The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Dec. 01, 2004
Tai Min, San Jose, CA (US);
Pokang Wang, San Jose, CA (US);
Xizeng Shi, Fremont, CA (US);
Yimin Guo, San Jose, CA (US);
Tai Min, San Jose, CA (US);
Pokang Wang, San Jose, CA (US);
Xizeng Shi, Fremont, CA (US);
Yimin Guo, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Applied Spintronics, Inc., Milpitas, CA (US);
Abstract
An MTJ MRAM cell is formed between or below an intersection of ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.