The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2008
Filed:
Apr. 02, 2007
Yimin Guo, San Jose, CA (US);
Po-kang Wang, San Jose, CA (US);
Xizeng Shi, Fremont, CA (US);
Tai Min, San Jose, CA (US);
Yimin Guo, San Jose, CA (US);
Po-Kang Wang, San Jose, CA (US);
Xizeng Shi, Fremont, CA (US);
Tai Min, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Applied Spintronics, Inc., Milpitas, CA (US);
Abstract
A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.