The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jul. 26, 2011
Applicants:
Tai Min, San Jose, CA (US);
Cheng Horng, San Jose, CA (US);
Po Kang Wang, San Jose, CA (US);
Inventors:
Assignee:
Headway Technologies, Inc., Milpitas, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G11C 11/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.