The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Dec. 28, 2015
Headway Technologies, Inc., Milpitas, CA (US);
Wei Cao, San Jose, CA (US);
Cheng T. Horng, San Jose, CA (US);
Witold Kula, Gilroy, CA (US);
Chyu Jiuh Torng, Pleasanton, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous layer for improved bit switching performance. According to one embodiment, the amorphous layer has a NiFeM/NiFeMconfiguration where Mand Mare Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms that affords a high magnetoresistive ratio. The Mand Melements in the NiFeMand NiFeMlayers each have a content of 5 to 30 atomic %. The NiFeM/NiFeMconfiguration substantially reduces bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.