Company Filing History:

10 out of 1,215

Headway Technologies, Incorporated

patents

1 out of 297

Read Rite Corporation

patents

1 out of 118

Magic Technologies, Inc.

patents

Years Active: 1998-2016

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9455400 - Magnetic tunnel junction for MRAM applications (2016-09-27),

2. 9224940 - Magnetic tunnel junction for MRAM applications (2015-12-29),

3. 8786036 - Magnetic tunnel junction for MRAM applications (2014-07-22),

4. 8169816 - Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory (2012-05-01),

5. 7288281 - CPP spin valve with ultra-thin CoFe(50%) laminations (2007-10-30),

6. 6632474 - Robust hard bias/conductor lead structures for future GMR heads (2003-10-14),

7. 6583966 - Method to make a high data rate stitched writer for a giant magneto-resistive head (2003-06-24),

8. 6466418 - Bottom spin valves with continuous spacer exchange (or hard) bias (2002-10-15),

9. 6373667 - Single stripe magnetoresistive (MR) head (2002-04-16),

10. 6306311 - Method to make a high data rate stitched writer for a giant magneto-resistive head (2001-10-23),

11. 6103136 - Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) (2000-08-15),

12. 5742459 - Magnetic head having encapsulated magnetoresistive transducer and (1998-04-21),

Title: Chyu Jiuh Torng: Innovator in Magnetic Tunnel Junction Technology

Introduction

Chyu Jiuh Torng is a prominent inventor based in Pleasanton, CA (US). He holds a total of 12 patents that showcase his contributions to the field of magnetic tunnel junctions (MTJs) for MRAM applications. His innovative work has significantly advanced the performance and efficiency of memory technologies.

Latest Patents

One of his latest patents involves a magnetic tunnel junction designed for MRAM applications. This invention features a composite free layer that includes a lower crystalline layer in contact with a tunnel barrier and an upper amorphous layer. The configuration aims to enhance bit switching performance. In one embodiment, the amorphous layer consists of a NiFeM/NiFeM structure, where the elements M and M1 are selected from Mg, Hf, Zr, Nb, or Ta, with M1 being unequal to M2. The crystalline layer is composed of Fe, Ni, or FeB, with a thickness of at least 6 Angstroms, which provides a high magnetoresistive ratio. The specific composition of the NiFeM and NiFeM layers is designed to reduce bit line switching current and the number of shorted bits. Additionally, annealing at temperatures between 300°C to 360°C results in a magnetoresistive ratio of approximately 150%.

Career Highlights

Chyu Jiuh Torng has worked with notable companies in the technology sector, including Headway Technologies, Incorporated and Read Rite Corporation. His experience in these organizations has allowed him to refine his expertise in magnetic technologies and contribute to significant advancements in the field.

Collaborations

Some of his notable coworkers include Cheng Tzong Horng and Cherng-Chyi Han, who have collaborated with him on various projects related to magnetic tunnel junctions.

Conclusion

Chyu Jiuh Torng's innovative work in magnetic tunnel junction technology has made a lasting impact on the field of memory applications. His patents reflect a commitment to enhancing performance and efficiency in MRAM technologies.

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