The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Sep. 02, 2004
Min LI, Dublin, CA (US);
Kunliang Zhang, Santa Clara, CA (US);
Cheng T. Horng, San Jose, CA (US);
Chyu Jiuh Torng, Pleasanton, CA (US);
Yu-hsia Chen, San Jose, CA (US);
Ru-ying Tong, San Jose, CA (US);
Min Li, Dublin, CA (US);
Kunliang Zhang, Santa Clara, CA (US);
Cheng T. Horng, San Jose, CA (US);
Chyu Jiuh Torng, Pleasanton, CA (US);
Yu-Hsia Chen, San Jose, CA (US);
Ru-Ying Tong, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.