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Fremont, CA, United States of America

Read Rite Corporation

USPTO Granted Patents = 297

% Expired Patents = 1.3

Forward Citations = 25,970

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243 inventors (with patents filed for the assignee):

Zhupei Shi (28 out of 46 patents)

Daniel A Nepela (28 out of 37 patents)

Hua-Ching Tong (25 out of 32 patents)

4. Ronald A Barr (19 out of 34 patents)

5. Robert Earl Rottmayer (17 out of 33 patents)

6. Samuel Wonder Yuan (14 out of 21 patents)

7. Kenneth E Knapp (13 out of 23 patents)

8. Yong Shen (12 out of 39 patents)

9. Ciuter Chang (12 out of 18 patents)

10. Jamshid Bozorgi (12 out of 17 patents)

11. Durga P Ravipati (12 out of 13 patents)

12. Marcos Moises Lederman (12 out of 18 patents)

13. Billy W Crue, Jr (12 out of 15 patents)

14. Yiming Huai (11 out of 190 patents)

15. Lien-Chang Wang (11 out of 33 patents)

Core Competencies:

MRAM

Inductive Write Head

Magnetoresistive Sensor

Spin Valve

High Density

Magnetic Recording

Thin Film

Gimbal Assembly

Optical Focusing Device

Disk Drive

High Speed Writing

Microactuated Positioning

297 patents: Sort by Forward Citations

1. 6873547 - High capacity MRAM memory array architecture (2005-03-29),

2. 6650503 - Inductive write head including a thin high moment pedestal having a tapered edge (2003-11-18),

3. 6633464 - Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system (2003-10-14),

4. 6618223 - High speed, high areal density inductive writer (2003-09-09),

5. 6583961 - Air bearing facilitating load/unload of a magnetic read/write head (2003-06-24),

6. 6577470 - Method and system for providing a tape head subassembly structure having an integrated wear bar and outrigger rail (2003-06-10),

7. 6552928 - Read-write control circuit for magnetic tunnel junction MRAM (2003-04-22),

8. 6552874 - Shared pole magnetic read-write head for achieving optimized erase band width and method of fabricating the same (2003-04-22),

9. 6538850 - Low profile head gimbal assembly with shock limiting and load/unload capability and method of manufacture thereof (2003-03-25),

10. 6532823 - Insulator layers for magnetoresistive transducers (2003-03-18),

11. 6515791 - Active reflection and anti-reflection optical switch (2003-02-04),

12. 6515573 - Method and system for providing edge-junction TMR utilizing a hard magnet as a pinned layer (2003-02-04),

13. 6512690 - High sensitivity common source amplifier MRAM cell, memory array and read/write scheme (2003-01-28),

14. 6512661 - Vertical giant magnetoresistance sensor utilizing an insulating bias layer (2003-01-28),

15. 6512659 - Disk drive actuator arm with microactuated read/write head positioning (2003-01-28),

Company Overview

Read Rite Corporation, based in Fremont, CA, specializes in the development and manufacturing of advanced magnetic read/write heads for data storage applications. The company focuses on innovative technologies such as Magnetoresistive Random Access Memory (MRAM), inductive write heads, and magnetoresistive sensors. Their expertise extends to high-density magnetic recording and thin film technologies, enabling efficient data storage solutions. Read Rite's commitment to research and development positions it as a key player in the magnetic recording industry.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

297 Patents

#8 in Fremont, CA

#314 in California

#1,479 in US

#3,009 in the World

Fremont, CA, United States of America

Read Rite Corporation

Forward Citations = 25,970

243 inventors:

Zhupei Shi (28 out of 46 patents)

Daniel A Nepela (28 out of 37 patents)

Hua-Ching Tong (25 out of 32 patents)

4. Ronald A Barr (19 out of 34 patents)

5. Robert Earl Rottmayer (17 out of 33 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Read Rite Corporation. Retrieved from https://idiyas.com/company/read-rite

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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