The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2003
Filed:
Nov. 21, 2001
Qiuqun (Kevin) Qi, Fremont, CA (US);
Xizeng Shi, Fremont, CA (US);
Read-Rite Corporation, Fremont, CA (US);
Abstract
In the present invention, a magnetic random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ) and a transistor. This memory cell provides a boosted output signal between different MTJ states stored. A method that is used by MRAM array for providing larger output voltage signal is also disclosed. The memory may comprise a plurality of such cells which are wired to form XY array. The source of the transistor is coupled to one end of the magnetic tunneling junction, while the drain of the transistor is coupled with an output for reading the magnetic memory cell. Another end of the magnetic tunneling junction is grounded. During reading, a constant voltage is applied to the gate of the transistor in selected memory cell. The drain of the transistor is connected to supply voltage via a load. The transistor functions both as switching element and amplifier to boost the output signal between different MTJ states. Either voltage or current at output can be detected to determine MTJ state.