Company Filing History:
Years Active: 2003
Title: Qiuqun (Kevin) Qi: Innovator in Magnetic Random Access Memory Technology
Introduction
Qiuqun (Kevin) Qi is a notable inventor based in Fremont, California. He has made significant contributions to the field of memory technology, particularly in magnetic random access memory (MRAM). His innovative work has led to advancements that enhance the performance and efficiency of memory systems.
Latest Patents
One of Qiuqun Qi's key patents is titled "High sensitivity common source amplifier MRAM cell, memory array and read/write scheme." This invention describes a magnetic random access memory cell that includes a magnetic tunnel junction (MTJ) and a transistor. The memory cell is designed to provide a boosted output signal between different MTJ states stored. The patent outlines a method for MRAM arrays that delivers a larger output voltage signal. The memory may consist of multiple cells arranged in an XY array, with the transistor functioning as both a switching element and an amplifier to enhance the output signal.
Career Highlights
Qiuqun Qi is currently employed at Read Rite Corporation, where he continues to develop innovative memory technologies. His work has been instrumental in advancing the capabilities of MRAM systems, making them more efficient and reliable.
Collaborations
Qiuqun has collaborated with Xizeng Shi, contributing to the development of cutting-edge memory solutions. Their partnership has fostered innovation in the field of memory technology.
Conclusion
Qiuqun (Kevin) Qi is a prominent inventor whose work in MRAM technology has paved the way for advancements in memory systems. His contributions are vital to the ongoing evolution of memory technology, and his innovative spirit continues to inspire future developments.