The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Nov. 12, 2020
Applicants:
Yimin Guo, San Jose, CA (US);
Rongfu Xiao, Dublin, CA (US);
Jun Chen, Fremont, CA (US);
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01F 10/3286 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A magnetoresistive element comprises a novel iPMA cap layer on a surface of a ferromagnetic recording layer. The iPMA cap layer introduces giant interfacial magnetic anisotropy energies (G-iMAE) on the interface between the recording layer and the iPMA cap layer, yielding a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer.