Richardson, TX, United States of America

Jozef C Mitros

This inventor holds 33 USPTO granted patents and 1 EPO patent, primarily in EEPROM Technology. Top assignees: Texas Instruments Corporation, Texas Instruments Incorporated Deutschland, Gmbh. Active years: 2002-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jozef C Mitros. Retrieved from https://idiyas.com/inventor/jozef-c-mitros

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0


Average Co-Inventor Count = 2.2

ph-index = 7

Forward Citations = 241(Granted Patents)


Location History:

  • Dallas, TX (US) (2005)
  • Richardson, TX (US) (2002 - 2015)

Company Filing History:


Years Active: 2002-2015

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Areas of Expertise:
EEPROM
Memory Cell
Analog Capacitor
High Voltage
MOS Transistor
Fabrication Method
Capacitor Dielectric
Sub Micron Processes
Cell Area Reduction
Performance Improvement
Drain Extended Transistors
Low Cost Fabrication
33 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jozef C. Mitros

Introduction

Jozef C. Mitros is a notable inventor based in Richardson, Texas, recognized for his significant contributions to the field of electrical engineering and semiconductor technology. With a remarkable portfolio of 33 patents, he has played an integral role in advancing innovations in memory technology.

Latest Patents

Jozef's recent patents highlight his expertise in memory cell design. One of his innovations, the "Reduced Area Single Poly EEPROM," presents a breakthrough in the configuration of EEPROM cells. This design integrates the read transistor within either the control gate well or the erase gate well, optimizing the lateral separation to enhance efficiency during program and erase operations.

Additionally, his patent for an "Area-Efficient Electrically Erasable Programmable Memory Cell" reflects a refined approach to EEPROM construction. This design allows for the formation of memory cells utilizing only a single polysilicon level, incorporating a coupling capacitor and a combined read transistor and tunneling capacitor. The improvements in breakdown voltage performance through the incorporation of lightly-doped regions signify the ongoing evolution of memory technology through Jozef's innovations.

Career Highlights

Throughout his career, Jozef has been associated with prestigious companies, including Texas Instruments Corporation and Texas Instruments Incorporated Deutschland, Gmbh. His work has had a lasting impact on the development of semiconductor technologies, establishing him as a key figure in the industry.

Collaborations

Jozef has collaborated with notable professionals, including coworkers like Xiaoju Wu and Imran Khan. These partnerships have contributed significantly to his innovative projects and the further development of advanced memory solutions.

Conclusion

Jozef C. Mitros continues to make strides in the field of semiconductor technology, demonstrating an unwavering commitment to innovation. His contributions through patents not only highlight his expertise but also serve as a foundation for future advancements in the electronics industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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