The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2007
Filed:
May. 21, 2003
Applicants:
Xiaoju Wu, Irving, TX (US);
Jozef Mitros, Richardson, TX (US);
Pinghai Hao, Plano, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
The leakage current of an OTP-EPROM cell formed using buried channel PMOS technology can be reduced. The reduction in leakage current of the OTP-EPROM can be achieved by blocking implantation of the Vimplant into a channel region of an n-well that substantially underlies a floating gate structure. The Vimplant can be blocked by providing a mask overlying the surface of the channel region of the n-well during implantation of the Vimplant.
Wu, Xiaoju. (2007). Fabrication of an otp-eprom having reduced leakage current (U.S. Patent No. 7244651). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7244651
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile