The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Dec. 12, 2007
Applicants:
Xiaoju Wu, Irving, TX (US);
Jozef Czeslaw Mitros, Richardson, TX (US);
Inventors:
Xiaoju Wu, Irving, TX (US);
Jozef Czeslaw Mitros, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A test structure which can be used to detect residual conductive material such as polysilicon which can result from an under etch comprises a PMOS transistor and an OTP EPROM floating gate device. By testing the devices using different testing parameters, it can be determined whether residual conductive material remains subsequent to an etch, and where the residual conductive material is located on the device. A method for testing a semiconductor device using the test structure is also described.