The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Feb. 16, 2005
Jozef Czeslaw Mitros, Richardson, TX (US);
David Tatman, Richardson, TX (US);
Jozef Czeslaw Mitros, Richardson, TX (US);
David Tatman, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A one time programmable (OTP) electrically programmable read only memory (EPROM) transistor () having an increased breakdown voltage (BVdss) is disclosed. The increased breakdown voltage reduces the probability that the OTP EPROM () will breakdown during a programming operation by maintaining a breakdown voltage above a programming voltage. The breakdown voltage is, at least partially, increased by forming a p-doped region () within a semiconductor substrate (), and forming a drain region () of the OTP EPROM () within the p-doped region ().