The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Mar. 04, 2004
Applicants:
Pinghai Hao, Plano, TX (US);
Jozef Mitros, Richardson, TX (US);
Xiaoju Wu, Irving, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method forming a current path in a substrate () having a first conductivity type is disclosed. The method includes forming an impurity region () having a second conductivity type and extending from a face of the substrate to a first depth. A hole () is formed in the impurity region. A first dielectric layer (-) is formed on an inner surface of the hole. A first electrode () is formed in the hole adjacent the dielectric layer.