Jon Scott Choy

This inventor holds 71 USPTO granted patents and 3 published patent applications and 4 EPO patents, primarily in Non-Volatile Memory (CPC class G11C). Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc., Intersil Americas Inc.. Active years: 2004-2025.

USPTO Granted Patents = 71 (Patent Applications = 3)

% Patents Active = 98.6

EPO Patents = 4 (Patent Applications = 4)

Average Co-Inventor Count = 2.1

ph-index = 9

Forward Citations = 397(Granted Patents)

Forward Citations (Not Self Cited) = 367(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

39 out of 5,491

Freescale Semiconductor,inc.

Intersil Americas Inc.

Years Active: 2004-2025

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Areas of Expertise:

Non-Volatile Memory

Magnetoresistive RAM

One-Time Programmable Cells

Read Circuitry

Sense Amplifiers

Voltage Regulation

Charge Pump Circuit

Temperature-Based Programming

Memory Testing

Column Repair

Static RAM

Hierarchical Circuit Simulation

71 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12333150 - Partitioned non-volatile memory (NVM) having a normal read bus and a verify read bus (2025-06-17),

2. 12224024 - Memory with one-time programmable (OTP) cells (2025-02-11),

3. 12094510 - Magnetoresistive random access memory (MRAM) with end of life margin sensor (2024-09-17),

4. 12051476 - Testing disruptive memories (2024-07-30),

5. 11989417 - Column repair in a memory system using a repair cache (2024-05-21),

6. 11742012 - Memory read circuitry with a flipped voltage follower (2023-08-29),

7. 11521692 - Memory with one-time programmable (OTP) cells and reading operations thereof (2022-12-06),

8. 11521665 - Non-volatile memory having write detect circuitry (2022-12-06),

9. 11404118 - Memory with sense amplifiers (2022-08-02),

10. 11348628 - Non-volatle memory with virtual ground voltage provided to unselected column lines during memory read operation (2022-05-31),

11. 11328784 - Memory with cells having multiple select transistors (2022-05-10),

12. 11289144 - Non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operation (2022-03-29),

13. 11250898 - Non-volatile memory with multiplexer transistor regulator circuit (2022-02-15),

14. 11170849 - Memory with select line voltage control (2021-11-09),

15. 11145382 - Non-volatile memory with a well bias generation circuit (2021-10-12),

Title: Jon Scott Choy: A Pioneer in Magnetoresistive Random Access Memory

Introduction

Jon Scott Choy, a distinguished inventor located in Austin, TX, has made significant contributions to the field of memory technology. With an impressive portfolio of 70 patents, his innovations have been pivotal in advancing the capabilities of magnetoresistive random access memory (MRAM) systems.

Latest Patents

Among Jon's latest patents are groundbreaking designs for memory incorporating one-time programmable (OTP) cells. One of these patents details an MRAM array comprising cells with Magnetic Tunnel Junctions (MTJ). The design enables permanent breakdown of the tunnel dielectric layer for each MRAM cell through a one-time programmable write operation, enhancing data reliability and performance. Another noteworthy patent introduces an MRAM array with an end-of-life margin sensor. This design utilizes a sensor array to monitor the rupture state of an MTJ, ensuring optimal performance and longevity of the memory cells in the data array.

Career Highlights

Jon has had a successful career that includes significant roles at Freescale Semiconductor and NXP USA, Inc. His expertise and innovative thinking have been integral to the growth and refinement of MRAM technology, making him a respected figure in the industry.

Collaborations

Throughout his career, Jon has collaborated with talented individuals such as Karthik Ramanan and Padmaraj Sanjeevarao. Together, they have pushed the boundaries of memory technology, bringing innovative solutions to the market that address the demands of modern computing.

Conclusion

Jon Scott Choy's dedication to innovation in magnetoresistive random access memory has positioned him as a leading inventor in the field. With over 70 patents to his name, his work continues to impact the future of memory technology, inspiring new generations of inventors and engineers.