The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2022

Filed:

May. 04, 2021
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Jacob T. Williams, Austin, TX (US);

Gilles Joseph Maurice Muller, Austin, TX (US);

Karthik Ramanan, Austin, TX (US);

Jon Scott Choy, Austin, TX (US);

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 17/18 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01);
Abstract

A non-volatile memory includes resistive cells, write circuitry, and write detect circuitry. Each resistive cell has a resistive storage element and is coupled to a corresponding first column line and corresponding second column line. The write circuitry is configured to provide a write current through a resistive storage element of a selected resistive memory cell during a write operation based on an input data value. The write detect circuitry is configured to generate a reference voltage using a voltage at the corresponding first column line coupled to the selected resistive memory cell at an initial time of the write operation, and, during the write operation, after the initial time, provide a write detect signal based on a comparison between the voltage at the corresponding first column line coupled to the selected resistive memory cell and the reference voltage, wherein the input data value is based on the write detect signal.


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