The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jun. 17, 2022
Nxp Usa, Inc., Austin, TX (US);
Anirban Roy, Austin, TX (US);
Thomas Stephen Harp, Austin, TX (US);
Nihaar N. Mahatme, Austin, TX (US);
Jon Scott Choy, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A magnetoresistive random access memory (MRAM) array includes a data array and a sensor array. Each MRAM cell includes a Magnetic Tunnel Junction (MTJ). Each MRAM cell of the data array stores a data bit. A first and second column of the sensor array are connected to form a sensor column which includes sensor cells, each formed by a first MRAM cell in the first column together with a second MRAM cell in the second column along a same word line. Only one of a first MTJ of the first MRAM cell or second MTJ of the second MRAM cell is used as an MTJ of the sensor cell, and drain electrodes of select transistors of the first and second MRAM cells are electrically connected. Read circuitry provides read data from the data array and a sensor output indicative of a rupture state of an MTJ of the sensor array.