Nihaar N Mahatme

This inventor holds 24 USPTO granted patents and 4 published patent applications, primarily in Memory Technology. Top assignee: Nxp USA, Inc.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nihaar N Mahatme. Retrieved from https://idiyas.com/inventor/nihaar-n-mahatme

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 24 (Patent Applications = 4)

% Patents Active = 91.7

Average Co-Inventor Count = 2.5

ph-index = 5

Forward Citations = 88(Granted Patents)

Company Filing History:

24 out of 2,854

Nxp USA, Inc.

patents

Years Active: 2017-2026

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Areas of Expertise:

Dynamic Random Access Memory

Magnetoresistive RAM

Physically Unclonable Function

Non-Volatile Memory

Error Rate Reduction

One-Time Programmable Cells

Integrated Circuit

Refresh Operations

Tamper Protection

Glitch Profiling

Memory Arrays

Magnetic Attack Detection

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12704962 - Sensing within an embedded dynamic random access memories (DRAMs) having reference cells (2026-08-11),

2. 12531103 - Management of refresh operations in an embedded dynamic random access memories (DRAMs) having canary cells (2026-01-20),

3. 12406716 - Refresh operations in embedded dynamic random access memories (DRAMs) (2025-09-02),

4. 12224024 - Memory with one-time programmable (OTP) cells (2025-02-11),

5. 12094510 - Magnetoresistive random access memory (MRAM) with end of life margin sensor (2024-09-17),

6. 12001674 - Reusing memory arrays for physically unclonable function (PUF) generation (2024-06-04),

7. 11908784 - Packaged semiconductor device assembly (2024-02-20),

8. 11755411 - Error rate reduction in a non-volatile memory (NVM), including magneto-resistive random access memories (MRAMS) (2023-09-12),

9. 11379307 - Error rate reduction in a non-volatile memory (NVM), including magneto-resistive random access memories (MRAMs) (2022-07-05),

10. 11277271 - SRAM based physically unclonable function and method for generating a PUF response (2022-03-15),

11. 11233663 - Physically unclonable function having source bias transistors (2022-01-25),

12. 11222679 - Packaged integrated circuit having a photodiode and a resistive memory (2022-01-11),

13. 11164648 - Glitch profiling in an integrated circuit (2021-11-02),

14. 11056161 - Data processing system and method for generating a digital code with a physically unclonable function (2021-07-06),

15. 10978123 - Tamper protection of memory devices on an integrated circuit (2021-04-13),

Title: Nihaar N Mahatme: A Trailblazer in Innovation

Introduction:

Nihaar N Mahatme is a pioneering inventor with a remarkable passion for innovation, based in Austin, Texas. With a portfolio of 20 patents to her name, she has continually pushed the boundaries of what is possible in the world of inventors.

Latest Patents:

One of Nihaar's latest patents is the "Magnetoresistive random access memory (MRAM) with end of life margin sensor." This innovative technology includes a data array and a sensor array, utilizing Magnetic Tunnel Junctions (MTJs) to store data bits and provide sensor output. Another recent patent is the "Reusing memory arrays for physically unclonable function (PUF) generation," which involves programming bit cells with user data to generate potential PUF bits.

Career Highlights:

Nihaar N Mahatme is currently contributing her expertise at NXP USA, Inc., a leading technology company. Her work in developing cutting-edge memory technologies has solidified her reputation as a trailblazer in the field of inventors.

Collaborations:

Throughout her career, Nihaar has collaborated with esteemed colleagues such as Anirban Roy and Alexander Hoefler. These partnerships have led to significant breakthroughs in the realm of memory technologies and innovation.

Conclusion:

In conclusion, Nihaar N Mahatme's unwavering dedication to innovation and her groundbreaking patents place her at the forefront of inventors shaping the future. Her collaborative spirit and commitment to pushing boundaries make her a true trailblazer in the world of technology and invention.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

4 patents pending: