The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2022
Filed:
Dec. 09, 2020
Nxp Usa, Inc., Austin, TX (US);
Anirban Roy, Austin, TX (US);
Nihaar N. Mahatme, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A magnetoresistive random-access memory (MRAM) device includes an array of MRAM bit cells grouped into words, each word having specified number of data bit cells, error correction code (ECC) bit cells, and at least two inversion indicator bit cells, the inversion indicator bit cells being redundant of each other; and a memory controller. The memory controller is configured to, for each of the words, set the inversion indicator bit cells to indicate whether the number of data bit cells in a word having a zero value is greater than the number of data bit cells having a one value, invert the zeroes and ones in the bit cells when the inversion indicator bit cells are set to indicate a greater number of zeroes than ones in the data bit cells of the word, and revert the data bit cells to their value before the zeroes and ones were inverted.