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For the Inventor, By the Inventor

Boise, ID, United States of America

Joel A Drewes

USPTO Granted Patents = 61


Average Co-Inventor Count = 1.5

ph-index = 12

Forward Citations = 600(Granted Patents)

Forward Citations (Not Self Cited) = 568(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Minnetonka, MN (US) (2002 - 2008)
  • Boise, ID (US) (2003 - 2013)
  • Longmont, CO (US) (2009 - 2013)

Company Filing History:

goldMedal59 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 15,586 
 
Honeywell International Inc.
 patents
bronzeMedal1 out of 428 
 
Round Rock Research, LLC
 patents

Years Active: 2002-2013

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61 patents (USPTO):
1. 8565016 - System having improved surface planarity for bit material deposition (2013-10-22),
2. 8368133 - Memory constructions comprising magnetic materials (2013-02-05),
3. 7947597 - Methods of titanium deposition (2011-05-24),
4. 7943507 - Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds (2011-05-17),
5. 7902580 - Assemblies comprising magnetic elements and magnetic barrier or shielding (2011-03-08),
6. 7884405 - Method for production of MRAM elements (2011-02-08),
7. 7855085 - System and method for reducing shorting in memory cells (2010-12-21),
8. 7700480 - Methods of titanium deposition (2010-04-20),
9. 7662649 - Methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses (2010-02-16),
10. 7622388 - Methods of forming titanium-containing materials (2009-11-24),
11. 7605417 - Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements (2009-10-20),
12. 7585371 - Substrate susceptors for receiving semiconductor substrates to be deposited upon (2009-09-08),
13. 7538392 - Pseudo SOI substrate and associated semiconductor devices (2009-05-26),
14. 7521356 - Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds (2009-04-21),
15. 7517704 - MRAM layer having domain wall traps (2009-04-14),

Title: The Innovative Journey of Joel A. Drewes

Introduction: Joel A. Drewes, a talented inventor based in Boise, ID (US), has made significant contributions to the field of innovations with his creative mindset and dedication to problem-solving.

Latest Patents: Joel A. Drewes holds several patents in various industries, showcasing his versatility and ingenuity in inventing new solutions to complex challenges.

Career Highlights: Throughout his career, Joel A. Drewes has demonstrated a keen ability to identify gaps in the market and develop groundbreaking inventions to fill those voids. His passion for innovation has led to the successful commercialization of several of his patented ideas.

Collaborations: Joel A. Drewes has collaborated with leading companies, research institutions, and universities to further enhance his inventions and bring them to the market. His collaborative spirit has allowed him to tap into a diverse range of expertise, resulting in truly innovative solutions.

Conclusion: Joel A. Drewes continues to inspire the next generation of inventors with his remarkable achievements and unwavering commitment to pushing the boundaries of what is possible through innovation. His legacy in the world of inventions is sure to endure for years to come.

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