The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Apr. 08, 2004
Eric R. Blomiley, Boise, ID (US);
Nirmal Ramaswamy, Boise, ID (US);
Ross S. Dando, Nampa, ID (US);
Joel A. Drewes, Boise, ID (US);
Danny Dynka, Meridian, ID (US);
Eric R. Blomiley, Boise, ID (US);
Nirmal Ramaswamy, Boise, ID (US);
Ross S. Dando, Nampa, ID (US);
Joel A. Drewes, Boise, ID (US);
Danny Dynka, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.