The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Sep. 01, 2005
Applicants:
Nirmal Ramaswamy, Boise, ID (US);
Eugene Marsh, Boise, ID (US);
Joel Drewes, Longmont, CO (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides atomic layer deposition systems and methods that include at least one compound of the formula (Formula I): Ta(NR)(NRR), wherein each R, R, and Ris independently hydrogen or an organic group, with the proviso that at least one of R, R, and Ris a silicon-containing organic group. Such systems and methods can be useful for depositing tantalum silicon nitride layers on substrates.