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Jinqiao Xie

USPTO Granted Patents = 20 (Patent Applications = 5)

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 209(Granted Patents)

Company Filing History:

Triquint Semiconductor Corporation

patents

4. 1 out of 130

Tokyo University of Agriculture and Technology

where one patent can have more than one assignee

Years Active: 2015-2024

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20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12166118 - High electron mobility transistors (HEMTS) including a yttrium (Y) and aluminum nitride (AIN) (YAIN) alloy layer (2024-12-10),

2. 12074214 - High electron mobility transistor device having an aluminum-doped buffer layer (2024-08-27),

3. 10749009 - Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors (2020-08-18),

4. 10734512 - High electron mobility transistor (HEMT) device (2020-08-04),

5. 10636881 - High electron mobility transistor (HEMT) device (2020-04-28),

6. 10559665 - Field-effect transistor (2020-02-11),

7. 10446544 - Enhancement-mode/depletion-mode field-effect transistor GAN technology (2019-10-15),

8. 10290713 - Field-effect transistor (2019-05-14),

9. 10177247 - Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces (2019-01-08),

10. 10090172 - Semiconductor device with high thermal conductivity substrate and process for making the same (2018-10-02),

11. 10037899 - Semiconductor device with high thermal conductivity substrate and process for making the same (2018-07-31),

12. 9972708 - Double heterojunction field effect transistor with polarization compensated layer (2018-05-15),

13. 9865721 - High electron mobility transistor (HEMT) device and method of making the same (2018-01-09),

14. 9840790 - Highly transparent aluminum nitride single crystalline layers and devices made therefrom (2017-12-12),

15. 9748409 - Power semiconductor devices incorporating single crystalline aluminum nitride substrate (2017-08-29),

Title: Innovator Jinqiao Xie: Advancements in High Electron Mobility Transistors

Introduction: Jinqiao Xie, a prominent inventor based in Allen, TX, has made significant contributions to the field of high electron mobility transistors (HEMTs), holding a remarkable portfolio of 20 patents. His inventions focus on enhancing the efficiency and performance of electronic components, showcasing innovation in semiconductor technology.

Latest Patents: Among his latest patents, Xie developed advanced designs of high electron mobility transistors incorporating a yttrium (Y) and aluminum nitride (AlN) alloy layer. This innovative layer acts as a back-barrier to improve electron confinement within the channel of HEMTs. This technology addresses the challenges faced due to reduced dimensions of HEMTs as it enhances current control and simplifies pinch-off processes. Additionally, the YAlN layer is designed to avoid lattice strain due to its lattice-matching properties with the channel layer, also providing improved thermal resistance.

Another breakthrough by Xie includes a HEMT device featuring an aluminum-doped buffer layer. This invention involves a substrate that supports epitaxial layers, ensuring that the buffer layer contains aluminum at concentrations between 0.5% and 3%. This sophisticated structure aims to optimize the performance of HEMTs by ensuring effective current control and stability.

Career Highlights: Throughout his career, Jinqiao Xie has associated with renowned companies such as Qorvo US, Inc. and Hexatech, Inc. His expertise in the semiconductor field has positioned him as a leading inventor and innovator, contributing valuable advancements to modern electronics.

Collaborations: Collaboration has been a central aspect of Xie's professional journey. He has worked alongside notable professionals, including Edward A Beam, III, and Xing Gu. These partnerships have facilitated a dynamic exchange of ideas and skills, further nurturing the evolution of high-tech products in the industry.

Conclusion: With a robust collection of patents and a steadfast commitment to innovation in the realm of high electron mobility transistors, Jinqiao Xie stands out as a key figure in the semiconductor landscape. His contributions not only advance technological capabilities but also pave the way for future innovations in electronic devices.

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