The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Apr. 12, 2019
Qorvo Us, Inc., Greensboro, NC (US);
Edward A. Beam, III, Plano, TX (US);
Jinqiao Xie, Allen, TX (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A high electron mobility transistor (HEMT) device with epitaxial layers that provide an electron Hall mobility of 1080±5% centimeters squared per volt-second (cm/V·s) at room temperature for a charge density of 3.18×10/cmand method of making the HEMT device is disclosed. The epitaxial layers include a channel layer made of gallium nitride (GaN), a first spacer layer made of aluminum nitride (AlN) that resides over the channel layer, a first spacer layer made of AlGaN that resides over the first spacer layer, and a first barrier layer made of ScAlGaN that resides over the second spacer layer. In at least one embodiment, a second barrier layer made of AlGaN is disposed over the first barrier layer.