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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10177247 B1

PDFFull Text
Date of Patent:
Jan. 08, 2019

Filed:

Aug. 21, 2017

Continuous crystalline gallium nitride (gan) pn structure with no internal regrowth interfaces

Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Jinqiao Xie, Allen, TX (US);

Xing Gu, Allen, TX (US);

Edward A. Beam, III, Plano, TX (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:

Withrow & Terranova, P.L.L.C.

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/70 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/808 (2006.01); H01L 27/146 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66909 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02631 (2013.01); H01L 21/02647 (2013.01); H01L 29/0649 (2013.01); H01L 29/66446 (2013.01); H01L 29/66734 (2013.01); H01L 29/66924 (2013.01); H01L 29/7813 (2013.01); H01L 29/8083 (2013.01); H01L 27/14679 (2013.01); H01L 29/1066 (2013.01); H01L 29/1095 (2013.01); H01L 29/2003 (2013.01); H01L 29/66893 (2013.01); H01L 29/8086 (2013.01); H01L 2924/13062 (2013.01);
Abstract

A precursor cell for a transistor having a foundation structure, a mask structure, and a gallium nitride (GaN) PN structure is provided. The mask structure is provided over the foundation structure to expose a first area of a top surface of the foundation structure. The GaN PN structure resides over the first area and at least a portion of the mask structure and has a continuous crystalline structure with no internal regrowth interfaces. The GaN PN structure comprises a drift region over the first area, a control region laterally adjacent the drift region, and a PN junction formed between the drift region and the control region. Since the drift region and the control region form the PN junction having no internal regrowth interfaces, the GaN PN structure has a continuous crystalline structure with reduced regrowth related defects at the interface of the drift region and the control region.

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