The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2024
Filed:
Jan. 07, 2022
Qorvo Us, Inc., Greensboro, NC (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A layer of yttrium (Y) and aluminum nitride (AlN) is employed as a back-barrier to improve confinement of electrons within a channel layer of a high electron mobility transistor (HEMT). As HEMT dimensions are reduced and a channel length decreases, current control provided by a gate also decreases, and it becomes more difficult to 'pinch-off' current flow through the channel. A back-barrier layer on a back side of the channel layer improves confinement of electrons to improve pinch-off but does not cause a second 2DEG to be formed below the back-barrier layer. The YAlN layer can be lattice-matched to the channel layer to avoid lattice strain, and a thin layer of YAlN provides less thermal resistance than HEMTs made with thicker back-barrier materials. Due to its chemical nature, a YAlN layer can be used as an etch stop layer.