The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2018
Filed:
Mar. 24, 2017
Qorvo Us, Inc., Greensboro, NC (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer is over the substrate and configured to reduce a total strain of the semiconductor device. The channel layer is over the relaxation layer. The polarization compensation layer is between the relaxation layer and the channel layer and configured to reduce a polarization between the relaxation layer and the channel layer. The barrier layer is over the relaxation layer and configured to polarize a junction between the barrier layer and the channel layer to induce a two-dimensional electron gas in the channel layer.