The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Nov. 17, 2016
Qorvo Us, Inc., Greensboro, NC (US);
Edward A. Beam, III, Plano, TX (US);
Jinqiao Xie, Allen, TX (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer co-doped with silicon (Si) and germanium Ge and a method of making the same is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate. An n-type gallium nitride (GaN) layer is disposed on an interface surface of the epitaxial layers, wherein the n-type GaN layer is co-doped with silicon (Si) and germanium (Ge) that provide a carrier concentration of at least 1×10cmand a root mean square (RMS) surface roughness that is no greater than 2 nm for a contact surface of the n-type GaN layer that is interfaced with the interface surface of the epitaxial layers.