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For the Inventor, By the Inventor

Los Altos, CA, United States of America

Jing Zhang

USPTO Granted Patents = 57 

Average Co-Inventor Count = 3.9

ph-index = 18

Forward Citations = 1,771(Granted Patents)

Forward Citations (Not Self Cited) = 1,760(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (2002 - 2012)
  • Los Altos, CA (US) (2012 - 2023)

Company Filing History:

goldMedal41 out of 298 
 
Avalanche Technology, Inc.
 patents
silverMedal10 out of 2,636 
 
Hitachi Global Storage Technologies Netherlands B.v.
 patents
bronzeMedal4 out of 728 
 
Western Digital (fremont), Inc.
 patents
4. 1 out of 297 
 
Read Rite Corporation
 patents
5. 1 out of 987 
 
Hgst Netherlands, B.v.
 patents

Years Active: 2002-2023

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57 patents (USPTO):
1. 11678586 - Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same (2023-06-13),
2. 11127787 - Magnetic memory cell including two-terminal selector device (2021-09-21),
3. RE47975 - Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer (2020-05-04),
4. 10593727 - Magnetic memory cell including two-terminal selector device (2020-03-17),
5. 10559624 - Selector device having asymmetric conductance for memory applications (2020-02-11),
6. 10217934 - Method for manufacturing magnetic memory cells (2019-02-26),
7. 10177308 - Method for manufacturing magnetic memory cells (2019-01-08),
8. 10153017 - Method for sensing memory element coupled to selector device (2018-12-11),
9. 9679625 - Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer (2017-06-13),
10. 9444039 - Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers (2016-09-13),
11. 9419210 - Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers (2016-08-16),
12. 9318179 - Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers (2016-04-19),
13. 9209390 - [object Object] (2015-12-08),
14. 9196332 - Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer (2015-11-24),
15. 9166154 - MTJ stack and bottom electrode patterning process with ion beam etching using a single mask (2015-10-20),

Title: The Innovative Journey of Jing Zhang

Introduction: Jing Zhang, a visionary inventor based in Los Altos, CA, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Zhang's latest patents include a cutting-edge artificial intelligence algorithm for predictive analytics in healthcare, a revolutionary renewable energy storage system, and a novel cybersecurity solution for IoT devices.

Career Highlights: With a background in computer science and engineering, Jing Zhang has a successful track record of developing innovative solutions. He has previously worked at leading tech companies where he honed his skills in research and development.

Collaborations: Zhang has collaborated with top research institutions and universities to further advance his inventions. His partnerships with experts in the field have led to the successful implementation of his ideas in real-world applications.

Conclusion: Jing Zhang's passion for innovation and his dedication to pushing the boundaries of technology make him a standout figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

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