For the Inventor, By the Inventor

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Fremont, CA, United States of America

Avalanche Technology, Inc.

USPTO Granted Patents = 298

EPO Patents = 6

Trademarks = 3

Forward Citations = 2,578

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43 inventors (with patents filed for the assignee):

Yiming Huai (113 out of 190 patents)

Parviz Keshtbod (83 out of 96 patents)

Yuchen Zhou (80 out of 178 patents)

4. Rajiv Yadav Ranjan (75 out of 136 patents)

5. Ebrahim Abedifard (65 out of 128 patents)

6. Zihui Wang (54 out of 54 patents)

7. Roger Klas Malmhall (47 out of 48 patents)

8. Siamack Nemazie (46 out of 102 patents)

9. Jing Zhang (41 out of 57 patents)

10. Kimihiro Satoh (38 out of 38 patents)

11. Huadong Gan (34 out of 34 patents)

12. Mehdi Asnaashari (26 out of 105 patents)

13. Bing K Yen (25 out of 37 patents)

14. Xiaobin Wang (18 out of 18 patents)

15. Xiaojie Hao (13 out of 13 patents)

Core Competencies:

Nonvolatile Memory

Magnetic Random Access Memory

Magnetic Memory Element

Perpendicular Magnetic Tunnel Junction

Memory Cell

Selector Device

Magnetic Memory Array

Thermally Stable MTJ

Multilayered Seed Structure

Power-Efficient Programming

Dynamic Random Access Memory

Bidirectional Selector

298 patents: Sort by Forward Citations

1. 12432931 - Memory cell including two selectors and method of making same (2025-09-30),

2. 12382642 - Nonvolatile memory device including dual memory layers (2025-08-05),

3. 12284813 - Nonvolatile memory device including dual memory layers (2025-04-21),

4. 12278195 - Shielding of packaged magnetic random access memory (2025-04-14),

5. 12133471 - Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers (2024-10-29),

6. 12133395 - Multilayered seed for perpendicular magnetic structure including an oxide layer (2024-10-29),

7. 11854591 - Magnetic memory read circuit and calibration method therefor (2023-12-26),

8. 11848039 - Cross-point MRAM including self-compliance selector (2023-12-19),

9. 11785784 - Multilayered seed for perpendicular magnetic structure including an oxide layer (2023-10-10),

10. 11758822 - Magnetic memory element incorporating dual perpendicular enhancement layers (2023-09-12),

11. 11678586 - Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same (2023-06-13),

12. 11610616 - Locally timed sensing of memory device (2023-03-21),

13. 11538857 - Bidirectional selector device for memory applications (2022-12-27),

14. 11417836 - Magnetic memory element incorporating dual perpendicular enhancement layers (2022-08-16),

15. 11348971 - Multilayered seed for perpendicular magnetic structure (2022-05-31),

Avalanche Technology, Inc. is a leading provider of next-generation Magnetoresistive RAM (MRAM) solutions. The company's innovative memory technologies enable high-performance, high-density, and power-efficient non-volatile memory solutions for a wide range of applications. With a focus on delivering superior performance and reliability, Avalanche Technology continues to push the boundaries of advanced memory solutions.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

298 Patents

#4 in Fremont, CA

#316 in California

#1,408 in US

#2,903 in the World

Fremont, CA, United States of America

Avalanche Technology, Inc.

Forward Citations = 2,578

43 inventors:

Yiming Huai (113 out of 190 patents)

Parviz Keshtbod (83 out of 96 patents)

Yuchen Zhou (80 out of 178 patents)

4. Rajiv Yadav Ranjan (75 out of 136 patents)

5. Ebrahim Abedifard (65 out of 128 patents)

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