Xiaobin Wang

This inventor holds 18 USPTO granted patents, primarily in Magnetic Memory Technology. Top assignee: Avalanche Technology, Inc.. Active years: 2015-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xiaobin Wang. Retrieved from https://idiyas.com/inventor/xiaobin-wang-66055n3p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18

% Patents Active = 100.0

Average Co-Inventor Count = 5.3

ph-index = 4

Forward Citations = 90(Granted Patents)

Company Filing History:

18 out of 299

Avalanche Technology, Inc.

patents

Years Active: 2015-2020

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Areas of Expertise:

Selector Device

Memory Applications

Spin-Orbitronics

Magnetic Random Access Memory

Conductive Clusters

Magnetic Tunnel Junction

Perpendicular Enhancement Layer

Voltage-Switched MRAM

Composite Fixed Layer

Ultrathin Reference Layer

Anisotropic Free Layer

Multiple Free Layers

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10559624 - Selector device having asymmetric conductance for memory applications (2020-02-11),

2. 10224367 - Selector device incorporating conductive clusters for memory applications (2019-03-05),

3. 10153017 - Method for sensing memory element coupled to selector device (2018-12-11),

4. 10008540 - Spin-orbitronics device and applications thereof (2018-06-26),

5. 9871191 - Magnetic random access memory with ultrathin reference layer (2018-01-16),

6. 9871190 - Magnetic random access memory with ultrathin reference layer (2018-01-16),

7. 9831421 - Magnetic memory element with composite fixed layer (2017-11-28),

8. 9647202 - Magnetic random access memory with perpendicular enhancement layer (2017-05-09),

9. 9647032 - Spin-orbitronics device and applications thereof (2017-05-09),

10. 9559144 - Magnetic random access memory element having tantalum perpendicular enhancement layer (2017-01-31),

11. 9548334 - Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer (2017-01-17),

12. 9543506 - Magnetic random access memory with tri-layer reference layer (2017-01-10),

13. 9443577 - Voltage-switched magnetic random access memory (MRAM) and method for using the same (2016-09-13),

14. 9306154 - Magnetic random access memory with perpendicular enhancement layer (2016-04-05),

15. 9231027 - Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer (2016-01-05),

Title: The Innovative Journey of Xiaobin Wang

Introduction: Xiaobin Wang, a talented inventor based in Fremont, CA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Xiaobin Wang holds several patents in the areas of artificial intelligence, robotics, and renewable energy technologies, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and a passion for problem-solving, Xiaobin Wang has worked for leading tech companies, where he has spearheaded projects that have revolutionized industries and improved efficiency.

Collaborations: Throughout his career, Xiaobin Wang has collaborated with top researchers, engineers, and scientists to bring his ideas to life. His ability to work in multidisciplinary teams has led to the development of cutting-edge technologies.

Conclusion: Xiaobin Wang's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true visionary in the world of inventions. His impact on the industry is sure to be felt for years to come.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]