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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9831421 B1

PDFFull Text
Date of Patent:
Nov. 28, 2017

Filed:

Jul. 13, 2015

Magnetic memory element with composite fixed layer

Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Zihui Wang, Milpitas, CA (US);

Huadong Gan, Fremont, CA (US);

Yiming Huai, Pleasanton, CA (US);

Yuchen Zhou, San Jose, CA (US);

Xiaobin Wang, Fremont, CA (US);

Bing K. Yen, Cupertino, CA (US);

Xiaojie Hao, Milpitas, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:

Bing K. Yen

Primary Examiner:

Marc Armand

Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01F 41/30 (2006.01); H01L 29/66 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01F 41/302 (2013.01); H01L 27/228 (2013.01); H01L 29/66984 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); B82Y 40/00 (2013.01);
Abstract

The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer.

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