Huadong Gan

This inventor holds 34 USPTO granted patents and 5 published patent applications, primarily in Magnetic Memory Technology. Top assignee: Avalanche Technology, Inc.. Active years: 2015-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Huadong Gan. Retrieved from https://idiyas.com/inventor/huadong-gan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 (Patent Applications = 5)

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 227(Granted Patents)

Company Filing History:

34 out of 299

Avalanche Technology, Inc.

patents

Years Active: 2015-2020

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Areas of Expertise:

Magnetic Random Access Memory

Multilayered Seed Structure

Spin-Orbitronics

Perpendicular Enhancement Layer

Magnetic Tunnel Junction

Oxide/Metal Composite Layers

Iridium Anti-Ferromagnetic Coupling

Voltage-Switched MRAM

High Anisotropy

Composite Fixed Layer

Perpendicular Interfacial Anisotropy

Tantalum Enhancement Layer

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10727400 - Magnetic random access memory with perpendicular enhancement layer (2020-07-28),

2. 10361362 - Magnetic random access memory with ultrathin reference layer (2019-07-23),

3. 10347691 - Magnetic memory element with multilayered seed structure (2019-07-09),

4. 10090456 - Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer (2018-10-02),

5. 10079338 - Magnetic memory element with perpendicular enhancement layer (2018-09-18),

6. 10050083 - Magnetic structure with multilayered seed (2018-08-14),

7. 10032979 - Magnetic memory element with iridium anti-ferromagnetic coupling layer (2018-07-24),

8. 10008663 - Perpendicular magnetic fixed layer with high anisotropy (2018-06-26),

9. 10008540 - Spin-orbitronics device and applications thereof (2018-06-26),

10. 9871191 - Magnetic random access memory with ultrathin reference layer (2018-01-16),

11. 9871190 - Magnetic random access memory with ultrathin reference layer (2018-01-16),

12. 9831421 - Magnetic memory element with composite fixed layer (2017-11-28),

13. 9793319 - Multilayered seed structure for perpendicular MTJ memory element (2017-10-17),

14. 9780300 - Magnetic memory element with composite perpendicular enhancement layer (2017-10-03),

15. 9748471 - Perpendicular magnetic memory element having magnesium oxide cap layer (2017-08-29),

Title: The Innovative Journey of Huadong Gan

Introduction: Huadong Gan, a visionary inventor based in Fremont, CA, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Huadong Gan holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Huadong Gan has worked for leading tech companies, spearheading research and development projects that have led to cutting-edge solutions in the industry.

Collaborations: Throughout his career, Huadong Gan has collaborated with top researchers, engineers, and scientists from renowned universities and research institutions, fostering a culture of innovation and knowledge sharing.

Conclusion: Huadong Gan's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a pioneering inventor in the ever-evolving tech landscape.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

5 patents pending: