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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10032979 B1

PDFFull Text
Date of Patent:
Jul. 24, 2018

Filed:

Nov. 17, 2017

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Huadong Gan, Fremont, CA (US);

Yiming Huai, Pleasanton, CA (US);

Yuchen Zhou, San Jose, CA (US);

Zihui Wang, Milpitas, CA (US);

Bing K. Yen, Cupertino, CA (US);

Xiaojie Hao, Fremont, CA (US);

Pengfa Xu, San Jose, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:

Bing K. Yen

Primary Examiner:

Marc Armand

Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H01F 41/30 (2006.01); H01L 29/66 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01F 41/302 (2013.01); H01L 27/228 (2013.01); H01L 29/66984 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); B82Y 40/00 (2013.01);
Abstract

The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.

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